(a): Volatile (short-term) memory property of two terminal device before the forming process. Current change observed by applying sequence of positive voltage pulses at intervals of 40 s and widths of 0.5 s. (b): Nonvolatile (long-term) memory property in the device after the forming process following application of a sequence of positive and negative pulses with widths of 0.1 ms. (c): Schematic illustration of the device structures before and after forming process. (Credit: MANA, NIMS)

Synaptic electronic circuits that learn and forget like neural processes

December 27, 2012

Rui Yang, Kazuya Terabe and colleagues at the National Institute for Materials Science (NIMS), and the International Center for Materials Nanoarchitectonics (MANA) in Japan and at the California NanoSystems Institute/UCLA have developed “nanoionic” (processes connected with fast ion transport in all-solid-state nanoscale systems) devices capable of a broad range of neuromorphic and electrical functions.

Background

Such a device would allow for fabrication of on-demand configurable circuits, analog memories, and digital-neural fused networks in a single device architecture.

Synaptic devices that mimic the learning and memory processes in living organisms are attracting interest as an alternative to standard computing elements to help extend performance beyond current physical limits. However, artificial synaptic systems have been hampered by complex fabrication requirements and limitations in the learning and memory functions they mimic.

Read more: Synaptic electronic circuits that learn and forget like neural processes | KurzweilAI.

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